RY7P250BM Datasheet PDF

RY7P250BM Nch 100V 300A Wide-SOA Power MOSFET Datasheet VDSS RDS(on)(Max.) ID PD 100V 1.86mΩ ±300A 340W lOutline DFN8080-8S DFN8080T8LSHAAI lFeatures 1) Low on - resistance 2) High power package (DFN8080) 3) Pb-free plating ; RoHS compliant 4) Halogen Free 5) 100% Rg and UIS tested 6) Wide-SOA lInner circuit lPackaging specifications Packing Reel size (mm) lApplication Hot Swap Controller(HSC) Type Tape width (mm) Quantity (pcs) Taping code Marking lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Drain - Source voltage VDSS Silicon limit (VGS=10V) ID*1 Continuous drain current Tc = 25°C (VGS=10V) ID*2 Pulsed drain current IDP*3 Gate - Source voltage VGSS Avalanche current, single pulse IAS*4 Avalanche energy, single pulse EAS*4 Power dissipation PD*2 Junction temperature Tj Operating junction and storage temperature range Tstg 100 ±300 ±250 ±900 ±20 79 497 340 175 -55 to +175 Embossed Tape 330 16 2500 TBC RY7P250BM Unit V A A A V A mJ W ℃ ℃ © 2025 ROHM Co., Ltd.