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1.2V Drive Pch MOSFET
RZE002P02
zStructure Silicon P-channel MOSFET
zFeatures 1) High speed switching. 2) Small package (EMT3). 3) 1.2V drive.
zApplications Switching
zPackage specifications
Package
Type
Code
Basic ordering unit (pieces)
RZE002P02
Taping TL
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous Pulsed
Souce current (Body diode)
Continuous Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1% ∗2 Each terminal mounted on a recommended land
Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg
Limits −20 ±10 ±200 ±800 −100 −800 150 150 −55 to +150
0.8 1.6 0.1Min.
zDimensions (Unit : mm)
EMT3
1.6 0.3
(3)
0.7 0.55
(2) (1) 0.2 0.2
0.5 0.
RZE002P02 Datasheet
