ROHM Semiconductor S2206
N-channel SiC power MOSFET
| Part No. | S2206 |
|---|---|
| Datasheet | S2206 Download |
| Manufacturer |  ROHM Semiconductor |
| Description | N-channel SiC power MOSFET |
| Buy | Stock & Price |
S2206 N-channel SiC power MOSFET bare die VDSS RDS(on) (Typ.) ID 650V 120mW 29A*1 Data Sheet lFeatures 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to drive lInner circuit (D) (G) (S) (G) Gate (D) Drain (S) Source *1 Body Diode lApplication
● Solar inverters
● DC/DC converters
● Switch mode power supplies
● Induction heating
● Motor drives lAbsolute maximum ratings (Ta = 25°C) Parameter Drain - Source voltage Continuous drain current Tc = 25°C Pulsed drain current Gate - Source voltage (DC) Gate - Source surge voltage (Tsurge ˂ 300nsec) Junction temperature Range of storage temperature Symbol VDSS ID *1 ID,pulse *2 VGSS VGSS-surge*3 Tj Tstg Value 650 29 72 -6 to 22 -10 to 26 175 -55 to +175 Unit V A A V V °C °C © 2016 ROHM Co., Ltd. All rights reserved. 1/11 2016.02 - Rev.C S2206 Data Sheet lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Drain - Source breakdown voltage V(BR)DSS VGS =...
● Solar inverters
● DC/DC converters
● Switch mode power supplies
● Induction heating
● Motor drives lAbsolute maximum ratings (Ta = 25°C) Parameter Drain - Source voltage Continuous drain current Tc = 25°C Pulsed drain current Gate - Source voltage (DC) Gate - Source surge voltage (Tsurge ˂ 300nsec) Junction temperature Range of storage temperature Symbol VDSS ID *1 ID,pulse *2 VGSS VGSS-surge*3 Tj Tstg Value 650 29 72 -6 to 22 -10 to 26 175 -55 to +175 Unit V A A V V °C °C © 2016 ROHM Co., Ltd. All rights reserved. 1/11 2016.02 - Rev.C S2206 Data Sheet lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Drain - Source breakdown voltage V(BR)DSS VGS =...
