ROHM Semiconductor S4003
N-channel SiC power MOSFET
| Part No. | S4003 |
|---|---|
| Datasheet | S4003 Download |
| Manufacturer |  ROHM Semiconductor |
| Description | N-channel SiC power MOSFET |
| Buy | Stock & Price |
S4003 N-channel SiC power MOSFET bare die VDSS RDS(on) (Typ.) ID 650V 17mW 118A*1 lFeatures 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to drive lInner circuit Datasheet (1) Gate (2) Drain (3) Source *1 Body Diode lApplication
●Solar inverters
●DC/DC converters
●Switch mode power supplies
●Induction heating
●Motor drives lAbsolute maximum ratings (Ta = 25°C) Parameter Drain - Source voltage Continuous drain current Pulsed drain current Tc = 25°C Gate - Source voltage (DC) Gate-Source Surge Voltage (tsurge < 300nsec) Recommended Drive Voltage Junction temperature Range of storage temperature Symbol VDSS ID *1 ID,pulse *2 VGSS VGSS_surge*3 VGS_op*4 Tj Tstg Value 650 118 295 -4 to +22 -4 to +26 0 / +18 175 -55 to +175 Unit V A A V V V °C °C © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111●14●001 1/11 TSQ50151-S4003 14.Jun.2018 - Rev.001 S4003 Datasheet lElectrical characterist
●Solar inverters
●DC/DC converters
●Switch mode power supplies
●Induction heating
●Motor drives lAbsolute maximum ratings (Ta = 25°C) Parameter Drain - Source voltage Continuous drain current Pulsed drain current Tc = 25°C Gate - Source voltage (DC) Gate-Source Surge Voltage (tsurge < 300nsec) Recommended Drive Voltage Junction temperature Range of storage temperature Symbol VDSS ID *1 ID,pulse *2 VGSS VGSS_surge*3 VGS_op*4 Tj Tstg Value 650 118 295 -4 to +22 -4 to +26 0 / +18 175 -55 to +175 Unit V A A V V V °C °C © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111●14●001 1/11 TSQ50151-S4003 14.Jun.2018 - Rev.001 S4003 Datasheet lElectrical characterist
