ROHM Semiconductor S4603
N-channel SiC power MOSFET bare die
FEATURES
1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to drive 1200V 36mΩ 43A lInner circuit (1) (2) (1) Gate (2) Drain *1 (3) Source *1 Body Diode (3)● Application
●Solar inverters
●DC/DC converters
●Switch mode power supplies
●Induction heating
●Motor drives lAbsolute maximum ratings (Tvj = 25°C unless otherwise specified) Parameter Symbol Drain - source voltage Continuous drain and source current VGS = VGS_on Pulsed drain current VGS = VGS_on Body diode pulsed forward current Body diode surge forward current Tc = 25°C Tc = 100°C Tc = 25°C VGS = 0 V Tc = 25°C Gate - source voltage (DC) Gate - source surge voltage (tsurge < 300ns) Recommended turn-on gate - source drive voltage Recommended turn-off gate - source drive voltage Virtual junction temperature Range of storage temperature VDSS ID, IS *1 ID,pulse *2 IS,pulse *1,*3 IS,pulse *1,*4 VGSS VGSS_surge*5 VGS_on*6 VGS_off Tvj Tstg Value Unit 1200 V 43 A 30 A 84 A 43 A 84 A -4 to +21 V -4 to +23 V +15 to +18 V 0 V 175 °C -40 to +175 °C ©2023 ROHM Co., Ltd.