ROHM Semiconductor S6401
SiC Schottky Barrier Diode Bare Die
| Part No. | S6401 |
|---|---|
| Datasheet | S6401 Download |
| Manufacturer |  ROHM Semiconductor |
| Description | SiC Schottky Barrier Diode Bare Die |
| Buy | Stock & Price |
FEATURES
1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible●Inner Circuit
●Construction Silicon carbide epitaxial planar type Schottky diode Datasheet
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ABSOLUTE MAXIMUM RATINGS
(Tj = 25°C ) Parameter Symbol Value Unit Reverse voltage (repetitive peak) VRM 1700 V Reverse voltage (DC) Continuous forward current VR 1700 V IF 10 *1 A Surge non- PW=10ms sinusoidal, Tj=25°C 41 A repetitive forward PW=10ms sinusoidal, Tj=150°C IFSM *2 30 A current PW=10s square, Tj=25°C 160 A i2t value 1≦PW≦10ms, Tj=25°C 1≦PW≦10ms, Tj=150°C ∫i2d*t2 8.4 4.5 A2s A2s Junction temperature Tj 175 °C Range of storage temperature Tstg 55 to 175 °C *1 Limited by Tj *2 Assumes Zth(j-a) of 0.57 °C/W or less. (Pulse Width = 8.3ms) © 2017 ROHM Co., Ltd. All rights reserved. 1/4 2017.11 - Rev.A S6401 Datasheet●Electrical characteristics (Tj = 25°C) Parameter Symbol Conditions Values Unit Min. Typ. Max. DC blocking voltage VDC IR =0.06mA 1700 - - V IF=10A,Tj=25°C - 1.65 1.95 V...
