Datasheet Summary
N-channel SiC power MOSFET co-packaged with SiC-SBD
VDSS RDS(on) (Typ.)
ID PD
1200V 80m 40A 262W
- Features
1) Low on-resistance
2) Fast switching speed
3) Fast reverse recovery
4) Low VSD
5) Easy to parallel
6) Simple to drive
7) Pb-free lead plating ; RoHS pliant
- Application
- Solar inverters
- DC/DC converters
- Induction heating
- Motor drives
- Outline
TO-247
- Inner circuit
D(2)
G(1)
- 1
- 2
S(3)
(1) Gate (2) Drain (3) Source
- 1 Body Diode
- 2 SBD
- Packaging specifications Packing Reel size (mm) Tape width (mm)
Type Basic ordering unit (pcs) Taping code...