SCS105KG Datasheet PDF

SCS105KG SiC Schottky Barrier Diode VR 1200V IF 5A QC 20nC lFeatures 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible lConstruction Silicon carbide epitaxial planer type lOutline TO-220AC Datasheet (1) lInner circuit (2) (3) (1) (1) Cathode (2) Cathode (3) Anode (2) (3) lPackaging specifications Packaging Reel size (mm) Tape width (mm) Type Basic ordering unit (pcs) Taping code Marking Tube 50 - SCS105KG lAbsolute maximum ratings (Tj = 25°C) Parameter Symbol Value Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current Surge no repetitive forward current Repetitive peak forward current Total power dissipation Junction temperature VRM 1200 VR 1200 IF 5*1 IFSM 21*2 97*3 IFRM 24*4 PD 83*5 Tj 175 Range of storage temperature Tstg -55 to +175 Thermal resistance, junction to case Rth(j-c) 1.8 *1 Tc=148°C *2 PW=8.3ms sinusoidal,Tj=25°C *3 PW=10ms square,Tj=25°C *4 Tc=100°C,Tj=150°C,Duty cycle=10% *5 Tc=25°C Unit V V A A A A W °C °C °C/W © 2012 ROHM Co., Ltd.