SCS110AM Datasheet PDF

SiC Schottky Barrier Diode SCS110AM lApplications Switching power supply lDimensions (Unit : mm) lFeatures 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible lConstruction Silicon carbide epitaxial planer type Data Sheet lStructure ROHM : TO-220FM2L lAbsolute maximum ratings (Tj=25°C) Parameter Symbol Limits Unit Reverse voltage (repetitive) Reverse voltage (DC) Continuous forward current Surge no repetitive forward current Repetitive peak forward current Total power disspation Junction temperature VRM VR IF IFSM IFRM PD Tj 600 600 10*1 40*2 160*3 23*4 28*5 150 V V A A A A W °C Storage temperature Tstg -55 to +150 °C Junction to case Rth(j-c) 4.4 °C / W (*1)Tc=69°C (*2)PW=8.3ms sinusoidal,Tj=25°C (*3)PW=10ms square,Tj=25°C (*4)Tc=95°C,Tj=125°C,Duty cycle=10% (*5)Tc=25°C lElectrical characteristics (Tj=25°C) [Per Leg] Parameter Symbol Min. DC blocking voltage VDC 600 Forward voltage VF - Reverse current IR - Total capacitance C- Total capacitive charge Qc - Switching time tc - Typ. - 1.5 1.6 2 10 430 47 16 15 Max. - 1.7 - 200 - © 2012 ROHM Co., Ltd.