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SCS112AG - SiC Schottky Barrier Diodes

Key Features

  • 1)Shorter recovery time 2)Reduced temperature dependence 3)High-speed switching possible.
  • Construction Silicon carbide epitaxial planer type ROHM : ＴO-220AC.
  • Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive) Reverse voltage (DC) Continuous forward current (.
  • 1) Forward current surge peak (60Hz 1cyc) (.
  • 2) Junction temperature Storage temperature (.
  • 1)Tc=115°C max (.
  • 2)PW=8.3ms sinusoidal Symbol VRM VR IF IFSM Tj Tstg www. DataSheet. co. kr Limits 60.

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Datasheet Details

Part number SCS112AG
Manufacturer ROHM
File Size 1.21 MB
Description SiC Schottky Barrier Diodes
Datasheet download datasheet SCS112AG Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SiC Schottky Barrier Diode SCS112AG Applications Switching power supply Dimensions (Unit : mm) Structure Features 1)Shorter recovery time 2)Reduced temperature dependence 3)High-speed switching possible Construction Silicon carbide epitaxial planer type ROHM : ＴO-220AC Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive) Reverse voltage (DC) Continuous forward current (*1) Forward current surge peak (60Hz 1cyc) (*2) Junction temperature Storage temperature (*1)Tc=115°C max (*2)PW=8.3ms sinusoidal Symbol VRM VR IF IFSM Tj Tstg www.DataSheet.co.