Datasheet4U Logo Datasheet4U.com

SCS120AG - SiC Schottky Barrier Diodes

Key Features

  • 1)Shorter recovery time 2)Reduced temperature dependence 3)High-speed switching possible.
  • Construction Silicon carbide epitaxial planer type ROHM : TO-220AC.
  • Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive) Reverse voltage (DC) Continuous forward current(.
  • 1) Forward current surge peak (60Hz 1cyc) (.
  • 2) Junction temperature Storage temperature (.
  • 1)Tc=98°C max (.
  • 2)PW=8.3ms sinusoidal Symbol VRM VR IF IFSM Tj Tstg www. DataSheet. co. kr Limits 600.

📥 Download Datasheet

Datasheet Details

Part number SCS120AG
Manufacturer ROHM
File Size 1.21 MB
Description SiC Schottky Barrier Diodes
Datasheet download datasheet SCS120AG Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SiC Schottky Barrier Diode SCS120AG Applications Switching power supply Dimensions (Unit : mm) Structure Features 1)Shorter recovery time 2)Reduced temperature dependence 3)High-speed switching possible Construction Silicon carbide epitaxial planer type ROHM : TO-220AC Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive) Reverse voltage (DC) Continuous forward current(*1) Forward current surge peak (60Hz 1cyc) (*2) Junction temperature Storage temperature (*1)Tc=98°C max (*2)PW=8.3ms sinusoidal Symbol VRM VR IF IFSM Tj Tstg www.DataSheet.co.