ROHM Semiconductor SCS120AG
SiC Schottky Barrier Diodes
| Part No. | SCS120AG |
|---|---|
| Datasheet | SCS120AG Download |
| Manufacturer |  ROHM Semiconductor |
| Description | SiC Schottky Barrier Diodes |
| Buy | Stock & Price |
APPLICATIONS
Switching power supply●Dimensions (Unit : mm)
●Structure
●
FEATURES
1)Shorter recovery time 2)Reduced temperature dependence 3)High-speed switching possible●Construction Silicon carbide epitaxial planer type ROHM : ＴO-220AC
●Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive) Reverse voltage (DC) Continuous forward current(*1) Forward current surge peak (60Hz
●1cyc) (*2) Junction temperature Storage temperature (*1)Tc=98°C max (*2)PW=8.3ms sinusoidal Symbol VRM VR IF IFSM Tj Tstg Limits 600 600 20 76 150 55 to 150 Unit V V A A °C °C
●Electrical characteristics (Ta=25°C) Parameter DC blocking voltage Forward voltage Reverse current Total capacitance Total capacitive charge Switching time Thermal resistance Symbol VDC VF IR C Qc tc Rth(j-c) Min. 600 - Typ. 1.5 4.0 860 93 35 19 - Max. 1.7 400 1.4 Unit V V μA pF pF nC ns °C/W IR=0.4mA IF=20A VR=600V Conditions VR=1V,f=1MHz VR=600V,f=1MHz VR=400V,di/dt=380A/μs VR=400V,di/dt=380A/μs junction to case ©2011 ROHM Co., Ltd.
