ROHM Semiconductor SCS120KG
SiC Schottky Barrier Diode
| Part No. | SCS120KG |
|---|---|
| Datasheet | SCS120KG Download |
| Manufacturer |  ROHM Semiconductor |
| Description | SiC Schottky Barrier Diode |
| Buy | Stock & Price |
FEATURES
1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible●Construction Silicon carbide epitaxial planer type
●Outline TO-220AC Datasheet (1)
●Inner circuit (2) (3) (1) (1) Cathode (2) Cathode (3) Anode (2) (3)
●Packaging specifications Packaging Reel size (mm) Tape width (mm) Type Basic ordering unit (pcs) Taping code Marking Tube 50 - SCS120KG
●Absolute maximum ratings (Tj = 25°C) Parameter Symbol Value Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current Surge no repetitive forward current Repetitive peak forward current Total power dissipation Junction temperature VRM 1200 VR 1200 IF 20*1 84*2 IFSM 358*3 IFRM 60*4 PD 130*5 Tj 175 Range of storage temperature Tstg 55 to 175 Thermal resistance, junction to case Rth(j-c) 1.1 *1 Tc=108°C *2 PW=8.3ms sinusoidal,Tj=25°C *3 PW=10s square,Tj=25°C *4 Tc=100°C,Tj=150°C,Duty cycle=10% *5 Tc=25°C Unit V V A A A A W °C °C °C/W © 2013 ROHM Co., Ltd. All rights reserved. 1/5 2013.01 - Rev.B SCS120KG Data Sheet
●Electrical characteristics (Tj = 25°C) Parameter Symbol Conditions Values Min.
