SCS140AE2 Datasheet PDF

SiC Schottky Barrier Diode SCS140AE2 lApplications Switching power supply lDimensions (Unit : mm) lFeatures 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible lConstruction Silicon carbide epitaxial planer type Data Sheet lStructure ROHM : TO-247 lAbsolute maximum ratings (Tj=25°C) Parameter Symbol Limits Unit Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current*6 Surge no repetitive forward current*6 Repetitive peak forward current*6 Total power disspation*6 Junction temperature VRM VR IF IFSM IFRM PD Tj 600 600 20 / 40*1 76 / 152*2 300 / 600*3 72 / 121*4 120 / 210*5 175 V V A A A A W °C Range of storage temperature Tstg -55 to +175 °C Junction to case *6 Rth(j-c) 1.2 / 0.70 °C / W (*1)Tc=121°C / Tc=112°C (*2)PW=8.3ms sinusoidal,Tj=25°C (*3)PW=10ms square,Tj=25°C (*4)Tc=95°C,Tj=125°C,Duty cycle=10% (*5)Tc=25°C (*6)Per Leg / Per Device lElectrical characteristics (Tj=25°C) [Per Leg] Parameter Symbol Min. DC blocking...