ROHM Semiconductor SCS220ANHR
Automotive Grade SiC Schottky Barrier Diode
| Part No. | SCS220ANHR |
|---|---|
| Datasheet | SCS220ANHR Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Automotive Grade SiC Schottky Barrier Diode |
| Buy | Stock & Price |
FEATURES
1) AEC-Q101 qualified 2) Low forward voltage 3) Negligible recovery time/current 4) Temperature independent switching behavior 5) Wide creepage distance = min. 5.10mm●Outline TO-263-2L (1) (2)
●Inner circuit (1) (3) (1) Cathode (2) Cathode (3) Anode (2) (3)
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APPLICATIONS
● On Board Charger● DC/DC Converter
● Wireless Charger
● EV Charger
●Packaging specifications Packaging Embossed tape Reel size (mm) 330 Tape width (mm) Type Basic ordering unit (pcs) 24 1000 Packing code TRL Marking SCS220AN
●Absolute maximum ratings (Tvj = 25°C unless otherwise specified) Parameter Symbol Value Unit Reverse voltage (repetitive peak) VRM 650 V Reverse voltage (DC) VR Continuous forward current (Tc= 116°C) IF 650 V 20*1 A Surge nonrepetitive forward current PW=10ms sinusoidal, Tvj=25°C PW=10ms sinusoidal, Tvj=150°C PW=10μs square, Tvj=25°C Repetitive peak forward current i2t value PW=10ms, Tvj=25°C PW=10ms, Tvj=150°C Total power dissipation IFSM IFRM ∫i2dt PD 68 A 53 A 260 A 71*2 A 23 A2s 14 A2s 100*3 W Virtual Junction temperature Tvj 175 °C Range of storage temperature Tstg *1 Limited by maximum Tvj and for Max.
