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SCS230AN Datasheet PDF

ROHM Semiconductor SCS230AN

SiC Schottky Barrier Diode

Part No. SCS230AN
Datasheet SCS230AN Download
Manufacturer
ROHM Semiconductor
Description SiC Schottky Barrier Diode
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SCS230AN datasheet page 1 preview
SCS230AN SiC Schottky Barrier Diode VR 650V IF 30A QC 38nC lFeatures 1) Low forward voltage 2) Negligible recovery time/current 3) Temperature independent switching behavior 4) Wide creepage distance = min. 5.10mm lOutline TO-263-2L Datasheet (1) (2) (3) lInner circuit (1) (1) Cathode (2) Cathode (3) Anode (2) (3) lApplications
● Factory Automation
● PV Power Conditioner
● Wireless Charger
● EV Charger Station lPackaging specifications Packaging Embossed tape Reel size (mm) 330 Tape width (mm) Type Basic ordering unit (pcs) 24 1000 Packing code TRL Marking SCS230AN lAbsolute maximum ratings (Tvj = 25°C unless otherwise specified) Parameter Symbol Value Unit Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current (Tc = 130°C) Surge nonrepetitive forward current PW = 10ms sinusoidal, Tvj = 25°C PW = 10ms sinusoidal, Tvj = 150°C PW = 10μs square, Tvj = 25°C Repetitive peak forward current i2t value PW = 10ms, Tvj = 25°C PW = 10ms, Tvj = 150°C Total power dissipation Virtual Junction temperature Range of storage temperature *1 Limited by maximum Tvj and for Max.
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