ROHM Semiconductor SCS306AM
SiC Schottky Barrier Diode
| Part No. | SCS306AM |
|---|---|
| Datasheet | SCS306AM Download |
| Manufacturer |  ROHM Semiconductor |
| Description | SiC Schottky Barrier Diode |
| Buy | Stock & Price |
SCS306AM SiC Schottky Barrier Diode lOutline VR 650V TO-220FM IF 6A QC 19nC lFeatures 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible 4) High surge current capability lInner circuit Datasheet (1) Cathode (2) Anode lPackaging specifications Packaging Tube lApplications
●PFC Boost Topology
●Secondary Side Rectification
●Data Center
●PV Power Conditioners Reel size (mm) Tape width (mm) Type Basic ordering unit (pcs) Packing code Marking 50 C SCS306AM lAbsolute maximum ratings (Tvj=25°C unless otherwise specified) Parameter Symbol Value Unit Reverse voltage (repetitive peak) VRM 650 V Reverse voltage (DC) VR Continuous forward current (Tc= 120°C) *1 IF 650 V 6 A Surge non- PW=10ms sinusoidal, Tvj=25°C repetitive forward PW=10ms sinusoidal, Tvj=150°C IFSM current PW=10ms square, Tvj=25°C Repetitive peak forward current IFRM 47 A 40 A 170 A 22 *2 A i2t value 1 ≦ PW ≦ 10ms, Tvj=25°C 1 ≦ PW ≦ 10ms, Tvj=150°C ∫i2dt 11 8.0 A2s A2s Total power disspation PD 30 *3 W Virtual Junction temperature Tvj 175 °C Range of storage temperature Tstg -55 to +175 °C *1 Limited by maximum Tvj and for Max.
●PFC Boost Topology
●Secondary Side Rectification
●Data Center
●PV Power Conditioners Reel size (mm) Tape width (mm) Type Basic ordering unit (pcs) Packing code Marking 50 C SCS306AM lAbsolute maximum ratings (Tvj=25°C unless otherwise specified) Parameter Symbol Value Unit Reverse voltage (repetitive peak) VRM 650 V Reverse voltage (DC) VR Continuous forward current (Tc= 120°C) *1 IF 650 V 6 A Surge non- PW=10ms sinusoidal, Tvj=25°C repetitive forward PW=10ms sinusoidal, Tvj=150°C IFSM current PW=10ms square, Tvj=25°C Repetitive peak forward current IFRM 47 A 40 A 170 A 22 *2 A i2t value 1 ≦ PW ≦ 10ms, Tvj=25°C 1 ≦ PW ≦ 10ms, Tvj=150°C ∫i2dt 11 8.0 A2s A2s Total power disspation PD 30 *3 W Virtual Junction temperature Tvj 175 °C Range of storage temperature Tstg -55 to +175 °C *1 Limited by maximum Tvj and for Max.
