ROHM Semiconductor SCS320AHG
SiC Schottky Barrier Diode
- Max Operating Temp : 175°C
Source:
Octopart
| Part No. | SCS320AHG |
|---|---|
| Datasheet | SCS320AHG Download |
| Manufacturer |  ROHM Semiconductor |
| Description | SiC Schottky Barrier Diode |
| Buy | Stock & Price |
FEATURES
1) Shorter recovery time 650V 20A 47nC●Outline TO-220ACP (1)
●Inner Circuit (2) (3) (1) 2) Reduced temperature dependence 3) High-speed switching possible 4) High surge current capability (1) Cathode (2) Cathode (3) Anode (2) (3)
●Construction Silicon carbide epitaxial planar type
●Packaging Specifications Packaging Tube Reel size (mm) - Tape width (mm) Type Basic ordering unit (pcs) 50 Packing code C9 Marking SCS320AH
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ABSOLUTE MAXIMUM RATINGS
(Tj = 25°C ) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current (Tc=125°C) Surge nonrepetitive forward current PW=10ms sinusoidal, Tj=25°C PW=10ms sinusoidal, Tj=150°C PW=10s square, Tj=25°C Repetitive peak forward current i2t value 1≦PW≦10ms, Tj=25°C 1≦PW≦10ms, Tj=150°C Total power disspation Junction temperature Range of storage temperature *1 Tc=100°C, Tj=150°C, Duty cycle=10% *2 Tc=25°C Symbol VRM VR IF IFSM IFRM ∫i2dt PD Tj Tstg Value 650 650 20 123 104 450 81 *1 75 54 115*2 175 55 to 175 Unit V V A A A A A A2s A2s W °C °C © 2017 ROHM Co., Ltd.
