ROHM Semiconductor SCT2120AF
N-channel SiC power MOSFET
FEATURES
1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to drive 6) Pb-free lead plating ; RoHS compliant●Application
●Solar inverters
●DC/DC converters
●Switch mode power supplies
●Induction heating
●Motor drives
●Outline TO220AB
●Inner circuit (1) (2) (3) (2) (1) Gate (2) Drain *1 (3) Source (1) *1 Body Diode (3)
●Packaging specifications Packing Tube Reel size (mm) - Tape width (mm) Type Basic ordering unit (pcs) 50 Packing code C Marking SCT2120AF
●Absolute maximum ratings (Ta = 25C) Parameter Drain - Source voltage Continuous drain current Pulsed drain current Tc = 25C Tc = 100C Gate - Source voltage (DC) Gate - Source surge voltage (Tsurge ˂ 300nsec) Power dissipation (Tc = 25C) Junction temperature Range of storage temperature Symbol VDSS ID *1 ID *1 ID,pulse *2 VGSS VGSS-surge*3 PD Tj Tstg Value 650 29 20 72 6 to 22 10 to 26 165 175 55 to 175 Unit V A A A V V W C C © 2013 ROHM Co., Ltd. All rights reserved. 1/12 20...