ROHM Semiconductor SCT3022AL
N-channel SiC power MOSFET
| Part No. | SCT3022AL |
|---|---|
| Datasheet | SCT3022AL Download |
| Manufacturer |  ROHM Semiconductor |
| Description | N-channel SiC power MOSFET |
| Buy | Stock & Price |
1) SCT3022AL N-channel SiC power MOSFET Datasheet VDSS RDS(on) (Typ.) ID*1 PD 650V 22mΩ 93A 339W lOutline TO-247N lInner circuit (1)(2)(3) lFeatures 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to drive 6) Pb-free lead plating ; RoHS compliant lApplication
●Solar inverters
●DC/DC converters
●Switch mode power supplies
●Induction heating
●Motor drives (1) Gate (2) Drain (3) Source *Body Diode Please note Driver Source and Power Source are not exchangeable. Their exchange might lead to malfunction. lPackaging specifications Packing Reel size (mm) Tape width (mm) Type Basic ordering unit (pcs) Taping code Marking Tube 30 C11 SCT3022AL lAbsolute maximum ratings (Tvj = 25°C unless otherwise specified) Parameter Symbol Drain - Source Voltage Continuous Drain current Pulsed Drain current (Tc = 25°C) Gate - Source voltage (DC) Tc = 25°C Tc = 100°C Gate - Source surge voltage (tsurge < 300nsec) Recommended drive voltage Virtual Junction tem...
●Solar inverters
●DC/DC converters
●Switch mode power supplies
●Induction heating
●Motor drives (1) Gate (2) Drain (3) Source *Body Diode Please note Driver Source and Power Source are not exchangeable. Their exchange might lead to malfunction. lPackaging specifications Packing Reel size (mm) Tape width (mm) Type Basic ordering unit (pcs) Taping code Marking Tube 30 C11 SCT3022AL lAbsolute maximum ratings (Tvj = 25°C unless otherwise specified) Parameter Symbol Drain - Source Voltage Continuous Drain current Pulsed Drain current (Tc = 25°C) Gate - Source voltage (DC) Tc = 25°C Tc = 100°C Gate - Source surge voltage (tsurge < 300nsec) Recommended drive voltage Virtual Junction tem...
