ROHM Semiconductor SCT3022KL
N-channel SiC power MOSFET
| Part No. | SCT3022KL |
|---|---|
| Datasheet | SCT3022KL Download |
| Manufacturer |  ROHM Semiconductor |
| Description | N-channel SiC power MOSFET |
| Buy | Stock & Price |
SCT3022KL N-channel SiC power MOSFET Datasheet VDSS RDS(on) (Typ.) ID PD 1200V 22mW 95A 427W lOutline TO-247N lInner circuit (1)(2)(3) lFeatures 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to drive 6) Pb-free lead plating ; RoHS compliant lApplication
●Solar inverters
●DC/DC converters
●Switch mode power supplies
●Induction heating
●Motor drives (1) Gate (2) Drain (3) Source *1 Body Diode lPackaging specifications Packing Reel size (mm) Tape width (mm) Type Basic ordering unit (pcs) Taping code Marking Tube 30 C11 SCT3022KL lAbsolute maximum ratings (Ta = 25°C) Parameter Drain - Source voltage Continuous drain current Pulsed drain current Tc = 25°C Tc = 100°C Gate - Source voltage (DC) Gate-Source Surge Voltage (tsurge < 300nsec) Recommended Drive Voltage Junction temperature Range of storage temperature Symbol VDSS ID *1 ID *1 ID,pulse *2 VGSS VGSS_surge*3 VGS_op*4 Tj Tstg Value 1200 95 67 237 -4
●Solar inverters
●DC/DC converters
●Switch mode power supplies
●Induction heating
●Motor drives (1) Gate (2) Drain (3) Source *1 Body Diode lPackaging specifications Packing Reel size (mm) Tape width (mm) Type Basic ordering unit (pcs) Taping code Marking Tube 30 C11 SCT3022KL lAbsolute maximum ratings (Ta = 25°C) Parameter Drain - Source voltage Continuous drain current Pulsed drain current Tc = 25°C Tc = 100°C Gate - Source voltage (DC) Gate-Source Surge Voltage (tsurge < 300nsec) Recommended Drive Voltage Junction temperature Range of storage temperature Symbol VDSS ID *1 ID *1 ID,pulse *2 VGSS VGSS_surge*3 VGS_op*4 Tj Tstg Value 1200 95 67 237 -4
