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SIM-012ST - High power chip sensor

Key Features

  • 1) High power by φ2 lenze. 2) Emitting pore can have 7time high power then substruk type with parabola structure. 3) Ultra -compact surface mount package. (3mmx3mmx2mm) 4) It is possible to do Reflow. 1 2 3 0.8 R1 2 3 2 Internal connection diagram 1 2 zAbsolute maximum ratings (Ta = 25°C) Parameter Forward current Reverse voltage Power dissipation Pulse forward current Operating temperature Storage temperature ∗ Pulse width=0.1msec, duty ratio 1% Symbol IF VR PD IFP∗ Topr Tstg Limits.

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Datasheet Details

Part number SIM-012ST
Manufacturer ROHM
File Size 39.14 KB
Description High power chip sensor
Datasheet download datasheet SIM-012ST Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SIM-012ST Sensors High power chip sensor, side view type SIM-012ST The SIM-012ST is ultra small size and high power ohip sensor. Original technology, original structure and original Optical design enable to use Automatic moantinig machine, Reflow, ultra smallsize, High power. zApplications Optical control equipment Light source for remote control devices zExternal dimensions (Units : mm) Note) 1.Unspecified tolerance shall be + − 0.2. 2.Dimension in parenthesis are show for reference. 0.25 2-0.4 zFeatures 1) High power by φ2 lenze. 2) Emitting pore can have 7time high power then substruk type with parabola structure. 3) Ultra -compact surface mount package. (3mmx3mmx2mm) 4) It is possible to do Reflow. 1 2 3 0.