SSTA13 Datasheet | ROHM

.. Transistors NPN small signal transistor SSTA13 z Features 1) High Current Gain. z Dimensions (Unit : mm) SSTA13 z Packaging specifications (3) 2.9 0.4 0.95 0.45 Type SSTA13 Code Basic ordering unit (pieces) T116 3000 (1)Emitter (2)Base (3)Collector (2) (1) 0.95 0.95 1.9 1.3 2.4 Package Taping Each lead has same dimensions Abbreviated symbol : RIM z Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCES VEBO IC PC Tj Tstg Limits 30 30 10 0.3 0.2 150 - 55 to 125 Unit V V V A W °C °C z Electrical characteristics (Ta=25°C) Parameter Symbol Min. 30 30 10 - - - - 5000 DC current transfer ratio Transition frequency Collector output capacitance ∗ Pulsed h FE 10000 f T Cob 125 - Typ. - - - - - - - - - - 5.4 Max. - - - 0.1 0.1 1.5 2.0 - - - - Unit V V V IC= 100µA IC= 10µA IE= 10µA VCB= 30V VEB= 10V IC/IB= 100m A/ 0.1m A VCE= 5V, IC= 100m A VCE= 5V, IC= 10m A VCE= 5V, IC= 100m A Conditions Collector-emitter breakdown voltage BVCES Collector-emitter breakdown voltage BVCEO Emitter-base breakdown voltage Collector-base cutoff current Emitter-base cutoff current Collector-emitter saturation voltage Base-emitter voltage BVEBO ICBO IEBO VCE(sat) VBE(on) µA µA - MHz p F VCE= 5V, IE= 10m A, f=100MHz VCB= 10V, f=100k Hz,...