ROHM Semiconductor TFZV18B
Zener Diode
TFZV18B Zener Diode
●Outline PD 500 mW
●Feature High reliability Small mold type
●Inner Circuit Data sheet
●Application Voltage regulation
●Structure Silicon Epitaxial Planar
●Absolute Maximum Rating (Ta = 25℃) Parameter Symbol Power dissipation PD Junction temperature Tj Storage temperature Tstg
●Packaging Specification Packing Embossed Tape Reel Size(mm) 180 Taping Width(mm) 8 Basic Ordering Unit(pcs) 3000 Taping Code TR Marking BN Limits Unit 500 mW 150 ℃ -55 ~ 150 ℃ © 2017 ROHMCo., Ltd.All rights reserved. 1/6 2017/01/12_Rev.002 TFZV Series Data sheet
●Characteristic (Ta = 25ºC) Symbol P/N Zener Voltage:VZ(V) Dynamic Impedance:ZZ(Ω) Reverse Current:IR(μA) MIN. MAX. Iz(mA) MAX. Iz(mA) MAX. VR(V) TFZV 2.0B 2.020 2.200 20 140 20 120 0.5 TFZV 2.2B 2.220 2.410 20 120 20 120 0.7 TFZV 2.4B 2.430 2.630 20 100 20 120 1.0 TFZV 2.7B 2.690 2.910 20 100 20 100 1.0 TFZV 3.0B 3.010 3.220 20 80 20 50 1.0 TFZV 3.3B 3.320 3.530 20 70 20 20 1.0 TFZV 3.6B 3.600 3.845 20 60 20 10 1.0 TFZV 3.9B 3.890 4.
●Outline PD 500 mW
●Feature High reliability Small mold type
●Inner Circuit Data sheet
●Application Voltage regulation
●Structure Silicon Epitaxial Planar
●Absolute Maximum Rating (Ta = 25℃) Parameter Symbol Power dissipation PD Junction temperature Tj Storage temperature Tstg
●Packaging Specification Packing Embossed Tape Reel Size(mm) 180 Taping Width(mm) 8 Basic Ordering Unit(pcs) 3000 Taping Code TR Marking BN Limits Unit 500 mW 150 ℃ -55 ~ 150 ℃ © 2017 ROHMCo., Ltd.All rights reserved. 1/6 2017/01/12_Rev.002 TFZV Series Data sheet
●Characteristic (Ta = 25ºC) Symbol P/N Zener Voltage:VZ(V) Dynamic Impedance:ZZ(Ω) Reverse Current:IR(μA) MIN. MAX. Iz(mA) MAX. Iz(mA) MAX. VR(V) TFZV 2.0B 2.020 2.200 20 140 20 120 0.5 TFZV 2.2B 2.220 2.410 20 120 20 120 0.7 TFZV 2.4B 2.430 2.630 20 100 20 120 1.0 TFZV 2.7B 2.690 2.910 20 100 20 100 1.0 TFZV 3.0B 3.010 3.220 20 80 20 50 1.0 TFZV 3.3B 3.320 3.530 20 70 20 20 1.0 TFZV 3.6B 3.600 3.845 20 60 20 10 1.0 TFZV 3.9B 3.890 4.