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TT8U2 - MOSFET

Features

  • 1) Pch MOSFET and shottky barrier diode are put in TSST8 package. 2) High-speed switching and Low on-resistance. 3) Low voltage drive(1.5V). 4) Built in Low IR shottky barierr daiode.

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Datasheet Details

Part number TT8U2
Manufacturer ROHM
File Size 554.54 KB
Description MOSFET
Datasheet download datasheet TT8U2 Datasheet

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Full PDF Text Transcription

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1.5V Drive Pch +SBD MOSFET TT8U2 Structure Silicon P-channel MOSFET / schottky barrier diode Features 1) Pch MOSFET and shottky barrier diode are put in TSST8 package. 2) High-speed switching and Low on-resistance. 3) Low voltage drive(1.5V). 4) Built in Low IR shottky barierr daiode. Applications Switching Packaging specifications Type TT8U2 Absolute maximum ratings (Ta = 25C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Channel temperature Power dissipation *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board.
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