ROHM Semiconductor UMB2N
PNP -100mA -50V Complex Digital Transistors
EMB2 / UMB2N / IMB2A PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors) Datasheet lOutline Parameter Tr1 and Tr2 EMT6 (6) (1) (5) (4) UMT6 IC(MAX.) R1 R2 VCC -50V -100mA 47kW 47kW SMT6 (6) (1) (5) (4) (2) (3) (2) (3) EMB2 (SC-107C) (4) (5) UMB2N SOT-353 (SC-88) lFeatures 1) Built-In Biasing Resistors, R1 = R2 = 47kW. 2) Two DTA144E chips in one package. 3) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit). 4) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of completely eliminating parasitic effects. 5) Only the on/off conditions need to be set for operation, making the circuit design easy. 6) Lead Free/RoHS Compliant. (6) (3) (2) (1) IMB2A SOT-457 (SC-74) lInner circuit EMB2 / UMB2N OUT (6) IN (5) GND (4) OUT (4) IMB2A IN (5) GND (6) lApplication Inverter circuit, Interface circuit, Driver circuit (1) GND (2) IN (3) OUT (3) GND (2) IN (1) OUT lPackaging specifications Part No.