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UMB2N - PNP -100mA -50V Complex Digital Transistors

Key Features

  • 1) Built-In Biasing Resistors, R1 = R2 = 47kW. 2) Two DTA144E chips in one package. 3) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit). 4) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of completely eliminating parasitic effects. 5) Only the on/off conditions need to be set for operation, making the circuit design.

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Datasheet Details

Part number UMB2N
Manufacturer ROHM
File Size 460.79 KB
Description PNP -100mA -50V Complex Digital Transistors
Datasheet download datasheet UMB2N Datasheet

Full PDF Text Transcription for UMB2N (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for UMB2N. For precise diagrams, and layout, please refer to the original PDF.

EMB2 / UMB2N / IMB2A PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors) Datasheet lOutline Parameter Tr1 and Tr2 EMT6 (6) (1) (5) (4) UMT6 I...

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) Datasheet lOutline Parameter Tr1 and Tr2 EMT6 (6) (1) (5) (4) UMT6 IC(MAX.) R1 R2 VCC -50V -100mA 47kW 47kW SMT6 (6) (1) (5) (4) (2) (3) (2) (3) EMB2 (SC-107C) (4) (5) UMB2N SOT-353 (SC-88) lFeatures 1) Built-In Biasing Resistors, R1 = R2 = 47kW. 2) Two DTA144E chips in one package. 3) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit). 4) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of completely eliminating parasitic effects.