UML6N
Overview
- 25 2.1
- 1Min. zStructure Silicon epitaxial planar transistor Schottky barrier diode 0~0.1 Each lead has same dimensions ROHM : UMT5 EIAJ : SC-88A zEquivalent circuit (3) (2) (1) Tr2 Di1 (4) (5) zPackaging specifications Type UML6N Package UMT5 Marking L6 Code TR Basic ordering unit (pieces) 3000 (1) Rev.A
- 0 (2) 1/3 UML6N Transistors zAbsolute maximum ratings (Ta=25°C) Di1 Parameter Symbol IO Average revtified forward current Forward current surge peak (60Hz, 1∞) IFSM VR Reverse voltage (DC) Tj Junction temperature Tstg Range of storage temperature Limits 200 1 30 125 -55~+125 Unit mA A V °C °C Tr2 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature Symbol VCBO VCEO VEBO IC ICP Pd Tj Tstg Limits 15 12 6 500 1 120 150 -55~+125 Unit V V V mA A mW °C °C ∗1 ∗1 Each terminal mounted on a recommended land. zElectrical characteristics (Ta=25°C) Di1 Parameter Forward voltage Reverse current Symbol VR IR Min. - - Typ. 0.40 4.0 Max. 0.50 30 Unit V µA Conditions IF=200mA VR=10V Tr2 Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. 12 15 6 - - - 270 - - Typ. - - - - - 90 - 320 7.5 Max. - - - 100 100 250 680 - - Unit V V V nA nA mV - MHz pF Conditions IC=1mA IC=10µA IE=10µA VCB=15V
