ROHM Semiconductor UMW6N
Dual Transistor
| Part No. | UMW6N |
|---|---|
| Datasheet | UMW6N Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Dual Transistor |
| Buy | Stock & Price |
FEATURES
1) Two 2SC3837K chips in a EMT or UMT or SMT package. 2) High transition frequency. (fT=1.5GHz) 3) Low output capacitance. (Cob=0.95pF) !Equivalent circuit EMX4 / UMX4N (3) (2) (1) IMX4 (4) (5) (6) UMW6N (3) (2) (1) FMW6 (3) (4) (5) UMW10 (3) (2) (1) FMW10 (3) (4) (5) (4) (5) (6) (3) (2) (1) (4) (5) (2) (1) (4) (5) (2) (1) !Absolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation EMX4 / UMW6N / UMW10N / UMX4N FMW6 / FMW10 / IMX4 Symbol VCBO VCEO VEBO IC Pc Tj Tstg Limits 30 18 3 50 150(TOTAL) 300(TOTAL) 150 −55~+150 Unit V V V mA mW ∗1 ∗2 Junction temperature Storage temperature ∗1 120mW per element must not be exceeded. ∗2 200mW per element must not be exceeded. °C °C !Electrical characteristics (Ta = 25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage hFE pairing Transition frequency Output capacitance ∗Transition frequency of the device.