Datasheet4U Logo Datasheet4U.com

UMX4N - Dual Transistor

Datasheet Summary

Features

  • 1) Two 2SC3837K chips in a EMT or UMT or SMT package. 2) High transition frequency. (fT=1.5GHz) 3) Low output capacitance. (Cob=0.9pF) zEquivalent circuits EMX4 / UMX4N (3) (2) (1) IMX4 (4) (5) (6) (4) (5) (6) (3) (2) (1) zDimensions (Unit : mm) EMX4 ROHM : EMT6 UMX4N Each lead has same dimensions zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power EMX4 / UMX4N dissipation IMX4 Jun.

📥 Download Datasheet

Datasheet preview – UMX4N

Datasheet Details

Part number UMX4N
Manufacturer ROHM
File Size 83.36 KB
Description Dual Transistor
Datasheet download datasheet UMX4N Datasheet
Additional preview pages of the UMX4N datasheet.

📁 Similar Datasheet

  • UMX4215 - LOW ON-RESISTANCE WIDE BANDWIDTH SINGLE 2:1 MUX/DEMUX ANALOG SWITCH (UTC)
  • UMX1089 - LOW LOSS MRI PROTECTION DIODES (Microsemi)
  • UMX18N - dual transistors (SeCoS)
  • UMX1N - Dual NPN General Purpose Transistors (SeCoS)
  • UMX502 - MELF PIN Diodes (Microchip)
  • UMX504 - MELF PIN Diodes (Microchip)
  • UMX508 - MELF PIN Diodes (Microchip)
  • UMX509 - MELF PIN Diodes (Microchip)
  • UMX5101 - ULTRA LOW MAGNETIC MOMENT PIN DIODE (Microsemi)
  • UMX512 - MELF PIN Diodes (Microchip)
Other Datasheets by Rohm
  • UMX18N - Dual Transistor
  • UMX1N - Dual Transistor
  • UMX2N - Transistor
  • UMX3N - General purpose dual transistors
  • UMX5N - Dual Transistor

Full PDF Text Transcription

Click to expand full text
Transistors EMX4 / UMX4N / IMX4 High transition frequency (dual transistors) EMX4 / UMX4N / IMX4 zFeatures 1) Two 2SC3837K chips in a EMT or UMT or SMT package. 2) High transition frequency. (fT=1.5GHz) 3) Low output capacitance. (Cob=0.9pF) zEquivalent circuits EMX4 / UMX4N (3) (2) (1) IMX4 (4) (5) (6) (4) (5) (6) (3) (2) (1) zDimensions (Unit : mm) EMX4 ROHM : EMT6 UMX4N Each lead has same dimensions zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power EMX4 / UMX4N dissipation IMX4 Junction temperature Storage temperature ∗1 120mW per element must not be exceeded. ∗2 200mW per element must not be exceeded.
Published: |