US5U29
Key Features
- 1cyc. ∗3 Mounted on a ceramic board
- Gate-source leakage Drain-source breakdown voltage V(BR) DSS -20 - IDSS Zero gate voltage drain current VGS (th) -0.7 Gate threshold voltage
- Part: US5U29
- Description: 2.5V Drive Pch+SBD MOS FET
- Manufacturer: ROHM
- Size: 82.58 KB