US5U29 - 2.5V Drive Pch+SBD MOS FET

Datasheet Summary

Features

1) The US5U29 combines Pch MOS FET with a Schottky barrier diode in a TUMT5 package. 2) Low on-resistance with fast switching. 3) Low voltage drive (2.5V). 4) Built-in schottky barrier diode has low forward voltage. (5) (4) 1.7 0.3 0.2 (1) (2) (3) 2.1 0~0.1 0.17 Abbreviated symbol : U29 z.

Rohm

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Datasheet Details

Part number	US5U29
Manufacturer	ROHM
File Size	82.58 KB
Description	2.5V Drive Pch+SBD MOS FET
Datasheet	US5U29 Datasheet
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US5U29 Transistor 2.5V Drive Pch+SBD MOS FET US5U29 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions (Unit : mm) TUMT5 2.0 1.3 0.65 0.65 0.85Max. 0.77 zFeatures 1) The US5U29 combines Pch MOS FET with a Schottky barrier diode in a TUMT5 package. 2) Low on-resistance with fast switching. 3) Low voltage drive (2.5V). 4) Built-in schottky barrier diode has low forward voltage. (5) (4) 1.7 0.3 0.2 (1) (2) (3) 2.1 0~0.1 0.17 Abbreviated symbol : U29 zApplications Load switch, DC/DC conversion zPackaging specifications Package Type US5U29 Code Basic ordering unit (pieces) Taping TR 3000 zEquivalent circuit (5) (4) ∗2 ∗1 (1) (2) ∗1 ESD protection diode ∗2 Body diode (3) 0.15Max. 0.

Published: May 30, 2007 |