ROHM Semiconductor US5U29
The US5U29 combines Pch MOS FET with a Schottky barrier diode in a TUMT5 package.| Part No. | US5U29 |
|---|---|
| Datasheet | US5U29 Download |
| Manufacturer |  ROHM Semiconductor |
| Description | 2.5V Drive Pch+SBD MOS FET |
| Buy | Stock & Price |
US5U29 Transistor 2.5V Drive Pch+SBD MOS FET US5U29 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions (Unit : mm) TUMT5 2.0 1.3 0.65 0.65 0.85Max. 0.77 zFeatures 1) 2) Low on-resistance with fast switching. 3) Low voltage drive (2.5V). 4) Built-in schottky barrier diode has low forward voltage. (5) (4) 1.7 0.3 0.2 (1) (2) (3) 2.1 0~0.1 0.17 Abbreviated symbol : U29 zApplications Load switch, DC/DC conversion zPackaging specifications Package Type US5U29 Code Basic ordering unit (pieces) Taping TR 3000 zEquivalent circuit (5) (4) ∗2 ∗1 (1) (2) ∗1 ESD protection diode ∗2 Body diode (3) 0.15Max. 0.2 1pin mark (1)Gate (2)Source (3)Anode (4)Cathode (5)Drain Rev.C 1/4 US5U29 Transistor zAbsolute maximum ratings (Ta=25°C) <MOSFET> Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Channel temperature Power dissipation <Di> Repetitive peak reverse voltage Reverse voltage Forward current Forward current surge peak Junction...
