US6J12 Datasheet PDF

US6J12 -12V Pch+Pch Small Signal MOSFET VDSS RDS(on)(Max.) ID PD -12V 105mΩ ±2A 1.0W lFeatures 1) Low on - resistance 2) Built-in G-S Protection Diode 3) Small Surface Mount Package (TUMT6) 4) Pb-free lead plating ; RoHS compliant lOutline SOT-363T TUMT6 lInner circuit Datasheet lApplication Switching lPackaging specifications Packing Reel size (mm) Type Tape width (mm) Quantity (pcs) Taping code Marking Embossed Tape 180 8 3000 TCR J12 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) <Tr1 and Tr2> Parameter Symbol Value Unit Drain - Source voltage VDSS -12 V Continuous drain current ID ±2 A Pulsed drain current IDP*1 ±6 A Gate - Source voltage VGSS 0～-8 V Power dissipation (total) PD*2 1.0 W PD*3 0.91 Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃ © 2019 ROHM Co., Ltd. All rights reserved. 1/11 20190527 - Rev.002 US6J12 lThermal resistance Parameter Thermal resistance, junction - ambient (total) Datasheet Symbol RthJA*2 RthJA*3 Values Min.