US6K4 Datasheet PDF

US6K4 Transistors 1.8V Drive Nch+Nch MOSFET US6K4 zStructure Silicon N-channel MOSFET zDimensions (Unit : mm) TUMT6 zFeatures 1) Two Nch MOSFETs are put in TUMT6 package. 2) High-speed switching, Low On-resistance. 3) 1.8V drive. Abbreviated symbol : K04 zApplications Switching zPackaging specifications Package Type US6K4 ∗2 ∗1 (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Drain (4) Tr2 Source (5) Tr2 Gate (6) Tr1 Drain zInner circuit Taping TR 3000 ∗1 ∗2 (6) (5) (4) Code Basic ordering unit (pieces) (1) (2) (3) zAbsolute maximum ratings (Ta=25°C) <It is the same ratings for the Tr1 and Tr2> Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Range of storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD Tch Tstg ∗2 Limits 20 ±10 ±1.5 ±3.0 0.6 2.4 1.0 0.7 150 −55 to +150 Unit V...