US6M1 Datasheet PDF

Transistors US6M1 4V+2.5V Drive Nch+Nch MOSFET US6M1 0.2Max. zStructure Silicon N-channel / P-channel MOSFET zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TUMT6). zApplication Power switching, DC / DC converter. zDimensions (Unit : mm) TUMT6 Abbreviated symbol : M01 zPackaging specifications Package Type Code Basic ordering unit (pieces) US6M1 Taping TR 3000 zEquivalent circuit (6) (5) (4) ∗1 ∗2 ∗2 ∗1 (1) (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (1) Tr1 (Nch) Source (2) Tr1 (Nch) Gate (3) Tr2 (Pch) Drain (4) Tr2 (Pch) Source (5) Tr2 (Pch) Gate (6) Tr1 (Nch) Drain zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Total power dissipation Channel temperature Storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board. Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Limits Tr1 : Nchannel Tr2 : Pchanne...