ROHM Semiconductor UT6JA2
MOSFET
UT6JA2 -30V Pch+Pch Middle Power MOSFET VDSS RDS(on)(Max.) ID PD -30V 70mΩ ±4.0A 2.0W lFeatures 1) Low on - resistance. 2) Small Surface Mount Package. 3) Pb-free lead plating ; RoHS compliant. 4) Halogen Free. lOutline DFN2020-8D HUML2020L8 lInner circuit Datasheet lPackaging specifications Packing Embossed Tape lApplication Reel size (mm) 180 Switching Type Tape width (mm) Basic ordering unit (pcs) 8 3000 Taping code TCR Marking JA2 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) <Tr1 and Tr2> Parameter Symbol Value Unit Drain - Source voltage VDSS -30 V Continuous drain current ID ±4.0 A Pulsed drain current IDP*1 ±12 A Gate - Source voltage VGSS ±20 V Avalanche current, single pulse IAS*2 -3.0 A Avalanche energy, single pulse EAS*2 6.5 mJ Power dissipation PD*3 2.0 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃ © 2016 ROHM Co., Ltd. All rights reserved. 1/11 20160122 - Rev.001 UT6JA2 lThermal resistance Parameter Thermal resistance, junction - ambient Datasheet Symbol RthJA*3 Values Unit Min.