ROHM Semiconductor UT6KB5
40V Nch+Nch Power MOSFET
UT6KB5 40V Nch+Nch Power MOSFET VDSS RDS(on)(Max.) ID PD 40V 48mΩ ±5.0A 2W lFeatures 1) Low on - resistance 2) Small Surface Mount Package 3) Pb-free plating ; RoHS compliant 4) Halogen Free lOutline DFN2020-8D HUML2020L8 lInner circuit Datasheet lPackaging specifications Packing lApplication Reel size (mm) Switching DC/DC Converter Type Tape width (mm) Quantity (pcs) Taping code Marking lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) <Tr1 and Tr2> Parameter Symbol Value Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Avalanche current, single pulse Avalanche energy, single pulse Power dissipation Junction temperature Operating junction and storage temperature range VDSS ID IDP*1 VGSS IAS*2 EAS*2 PD*3 Tj Tstg 40 ±5.0 ±20 ±20 5.0 2.0 2 150 -55 to +150 Embossed Tape 180 8 3000 TCR KB5 Unit V A A V A mJ W ℃ ℃ © 2021 ROHM Co., Ltd. All rights reserved. 1/11 20210602 - Rev.003 UT6KB5 lThermal resistance Parameter Thermal resistance, junction - ambient Datasheet Symbol RthJA*3 Values Unit Min.