ROHM Semiconductor VT6K1
Small Signal MOSFET
VT6K1 Nch+Nch 20V 100mA Small Signal MOSFET VDSS RDS(on)(Max.) ID PD 20V 3.5Ω ±100mA 150mW lFeatures 1) Low on - resistance. 2) Small package(VMT6) 3) Low voltage drive(1.2V drive) lOutline VMT6 lInner circuit Datasheet lPackaging specifications Packing lApplication Reel size (mm) Switching Type Tape width (mm) Basic ordering unit (pcs) Taping code Marking lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) <Tr1 and Tr2> Parameter Symbol Value Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Power dissipation total element VDSS ID IDP*1 VGSS PD*2 20 ±100 ±400 ±8 150 120 Junction temperature Operating junction and storage temperature range Tj 150 Tstg -55 to +150 Embossed Tape 180 8 8000 T2R K01 Unit V mA mA V mW ℃ ℃ © 2016 ROHM Co., Ltd. All rights reserved. 1/10 20160629 - Rev.001 VT6K1 lThermal resistance Parameter Thermal resistance, junction - ambient total element Datasheet Symbol RthJA Values Min. Typ. Max. ----- Unit lElect...