VT6X12 Datasheet PDF

Power management (dual transistors) VT6X12 zStructure NPN silicon epitaxial planar transistor zFeatures 1) Very small package with two transistors. 2) Suitable for current mirror circuits. zApplications Current mirror circuits zPackaging specifications Package Code Type Basic ordering unit (pieces) VT6X12 Taping T2R 8000 zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Collector-base voltage VCBO 50 Collector-emitter voltage VCEO 50 Emitter-base voltage VEBO 5 Collector current IC ICP ∗1 100 200 Power dissipation Total PD ∗2 Element 150 120 Junction temperature Tj Range of storage temperature Tstg ∗1 Pw=1mS Single pulse ∗2 Each terminal mounted on a recommended land 150 −55 to +150 Unit V V V mA mA mW mW °C °C zDimensions (Unit : mm) VMT6 1.2 ± 0.1 (6) (5) (4) 0.5 ± 0.1 0.2 ± 0.1 1.2 ± 0.1 0.14 0.92 ± 0.1 0.14 0 ~ 0.05 0.2 ± 0.1 (1) (2) (3) 0.16 ± 0.05 0.4 0.4 0.13 ± 0.05 0.8 ± 0.1 Abbreviated symbol : X12 Each lead has same dimensions. UNIT : mm zInner circuit (6) (5) (4) T...