ROHM Semiconductor YFZV20B
Zener Diode
FEATURES
1) Small power mold type (TUMD2M) N6 2) High reliability 3) By chip-mouter, automatic mouting is possible.●Construction Silicon epitaxial planar 0~ 0.10 TUMD2M 0.80 0.05 0.20 0.600.10 ROHM : TUMD2M dot (year week factory) day EX. YFZVFH3.6B
●Structure
●Taping dimensions (Unit : mm) Cathode Anode 4.0±0.1 2.0±0.05 φ1.15.555±0.01.1 0 0.25±0.05 1.75±0.1 3.5±0.05 2.75 8.0±0.2 2.8±0.05 1.43±0.05 4.0±0.1 φ1.01.0±0.02.2 0 0.9±0.08
●Absolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Unit Power dissipation () P 500 mW Junction temperature Storage temperature Operating temperature Tj 150 Tstg 55 to 150 Topr 55 to 150 °C °C °C () Device mounted on glass-epoxy board(50×50mm, t=1.6mm) Solder land (10×10mm) © 2015 ROHM Co., Ltd. All rights reserved. 1/6 2015.05 - Rev.B YFZVFH series Data Sheet
●Electrical characteristics (Ta= 25°C) Symbol TYP. Zener voltage : VZ(V) Dynamic Impedance : Reverse current : ZZ() IR(A) MIN. MAX. IZ(mA) MAX. IZ(mA) MAX. VR(V) YFZV 2.0B 2.020 2.200 20 140 20 120 0.5 YFZV 2.2B 2.220 2.410 20 120 20 120 0.7 YFZV 2.4B 2.430 2.630 20 100 20 120 1.0 YFZV 2.7B 2.690 2.910 20 100 20 100 1.