Datasheet4U.com

QL65F6SA Datasheet PDF

Roithner Lasertechnik QL65F6SA

QL65F6SA is a MOCVD grown 650 nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 10mW and low operating current for optoelectronic devices such as Optical Pick-up & Bar Code Reader.
Part No. QL65F6SA
Datasheet QL65F6SA Download
Manufacturer
Roithner Lasertechnik
Description InGaAlP Laser Diode
Buy Stock & Price
QL65F6SA datasheet page 1 preview

FEATURES

- Visible Light Output: λp = 650 nm - Optical Power Output: 10 mW CW - Package Type : TO-18 (5.6 mmφ) - Built-in Photo Diode for Monitoring Laser Diode ♦ELECTRICAL CONNECTION Bottom View Pin Configuration ♦ABSOLUTE MAXIMUM RATING at Tc=25°C Items Optical Output Power Laser Diode Reverse Voltage Photo Diode Reverse Voltage Operating Temperature Storage Temperature Symbols P V V Topr Tstg Values 10 2 30 −10 ~ +60 −40 ~ +85 Unit mW V V °C °C ♦ELECTRICAL and OPTICAL CHARACTERISTICS at Tc=25°C Items Optical Output Power Threshold Current Operating Current Operating Voltage Lasing Wavelength Symbols Po Ith Iop Vop Min. 645 6 24 0.1 - Typ. Max. 10 40 60 2.3 655 9 28 0.2 50 80 2.6 660 12 35 ±1.5 ±2.5 0.5 ±60 Unit mW mA mA V nm deg deg deg deg mA µm Condition Po = 10 mW Po = 10 mW Po = 10 mW Po = 10 mW Po = 10 mW Po = 10 mW Po = 10 mW Po = 10 mW λp θ  Beam Divergence θ⊥ ∆θ  Beam Angle ∆θ ⊥ Im Monitor Current Optical Distance ∆X, ∆Y, ∆Z NOTICE : QL65F6SA to be operated on APC circuit.
QL65F6SA page 2 preview QL65F6SA page 3 preview