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QL65F6SA - InGaAlP Laser Diode

Key Features

  • - Visible Light Output: λp = 650 nm - Optical Power Output: 10 mW CW - Package Type : TO-18 (5.6 mmφ) - Built-in Photo Diode for Monitoring Laser Diode.

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Datasheet Details

Part number QL65F6SA
Manufacturer Roithner Lasertechnik
File Size 76.10 KB
Description InGaAlP Laser Diode
Datasheet download datasheet QL65F6SA Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com QL65F6SA InGaAlP Laser Diode 2003 Rev 0 ♦OVERVIEW QL65F6SA is a MOCVD grown 650 nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 10mW and low operating current for optoelectronic devices such as Optical Pick-up & Bar Code Reader. ♦APPLICATION - Optical Pick-up - Bar Code Reader - Laser Module ♦FEATURES - Visible Light Output: λp = 650 nm - Optical Power Output: 10 mW CW - Package Type : TO-18 (5.6 mmφ) - Built-in Photo Diode for Monitoring Laser Diode ♦ELECTRICAL CONNECTION Bottom View Pin Configuration www.DataSheet4U.