AB081Q100W - High Power Single Bar QCW Infrared Laser Diode

Roithner

Key Features

Output Power: 100 W.
780-830 nm Emission Wavelength.
Spectral Width: ≤3 nm.
High Reliability, High Efficiency.

AB081Q100W high power single bar qcw infrared laser diode by Roithner - Datasheet Preview

Datasheet Details

Part number	AB081Q100W
Manufacturer	Roithner
File Size	152.48 KB
Description	High Power Single Bar QCW Infrared Laser Diode
Datasheet	AB081Q100W Datasheet

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Full PDF Text Transcription (Reference)

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AB081Q100W TECHNICAL DATA High Power Single Bar QCW Infrared Laser Diode Features • Output Power: 100 W • 780-830 nm Emission Wavelength • Spectral Width: ≤3 nm • High Reliability, High Efficiency Applications • Laser Pumping • Medical Usage • Printing Specifications (25°C) Item Optical Specifications QCW Output Power Array Length Center Wavelength Wavelength Tolerance Spectral Width Emitting Area Emitter Pitch Number of Emitters Wavelength Temperature Coefficient Beam Divergence Electrical Specifications Slope Efficiency Conversion Efficiency Threshold Current Operating Current Operating Voltage Absolute Maximum Ratings Reverse Voltage Operating Temperature Storage Temperature Symbol PO L λC Δλ WxH θ┴×θ║ ES NS ITH IF UF UR TOP TSTG Value 100 10 780-830 ±5 ≤3 80 x 1 100 100 0.