Roithner AS081C200W
High Power Stacked Infrared Laser Diode Array
| Part No. | AS081C200W |
|---|---|
| Datasheet | AS081C200W Download |
| Manufacturer |  Roithner |
| Description | High Power Stacked Infrared Laser Diode Array |
| Buy | Stock & Price |
FEATURES
APPLICATIONS
● Output Power: 200 W● Laser Pumping
● 780-830 nm Emission Wavelength
● Medical Usage
● Spectral Width: ≤4 nm
● High power laser diode applications
● High Reliability, High Efficiency
● CW stack arrays adopt micro-channel package Specifications (25°C) Item Optical Specifications CW Output Power Output Power / Bar Array Length Center Wavelength Wavelength Tolerance Spectral Width Package Style Bar Length Number of Bars Wavelength Temperature Coefficient Beam Divergence
ELECTRICAL SPECIFICATIONS
Slope Efficiency Conversion Efficiency Threshold Current Operating Current Operating VoltageABSOLUTE MAXIMUM RATINGS
Reverse Voltage Operating Temperature Storage Temperature Symbol PO PS L λC Δλ θ┴×θ║ ES NS ITH IF UF UR TOP TSTG Value 200 40 10 780-830 ±5 ≤4 Micro Channel 2.4 5 0.3 40x8 ≥1 ≥ 40% ≤ 12 ≤ 52 ≤ 10 2.5 +10 … +40 -40 ... +85 Unit W W mm nm nm nm mm nm/°C deg W/A A A V V °C °C 20.09.2010 AS081C200W 1 of 2 Package Dimensons Micro Channel (Unit:mm) Notes 1. Caution!