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AS081Q600W - High Power Stacked Infrared Laser Diode Array

Datasheet Summary

Features

  • Output Power: 600 W qCW.
  • 780-830 nm Emission Wavelength.
  • Spectral Width: ≤4 nm.
  • High Reliability, High Efficiency.
  • QCW stack can be designed according to the customer of non-standard products heat sink package.

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Datasheet Details

Part number AS081Q600W
Manufacturer Roithner
File Size 112.88 KB
Description High Power Stacked Infrared Laser Diode Array
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AS081Q600W TECHNICAL DATA High Power Stacked Infrared Laser Diode Array Features • Output Power: 600 W qCW • 780-830 nm Emission Wavelength • Spectral Width: ≤4 nm • High Reliability, High Efficiency • QCW stack can be designed according to the customer of non-standard products heat sink package Applications • Laser Pumping • Medical Usage • High power laser diode applications Specifications (25°C) Item Optical Specifications qCW Output Power qCW Output Power / Bar Array Length Center Wavelength Wavelength Tolerance Spectral Width Package Style Bar Length Number of Bars Wavelength Temperature Coefficient Beam Divergence Electrical Specifications Slope Efficiency Conversion Efficiency Threshold Current Operating Current Operating Voltage Absolute Maximum Ratings Reverse Voltage Operati
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