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RLT1050M-500G - High Power Infrared Laser Diode

Key Features

  • Lasing Mode Structure: multi mode Peak Wavelength : typ. 1050 nm Optical Ouput Power: 500 mW Package: 9 mm Electrical Connection Pin Configuration n-type PIN 1 2 3 Function LD Cathode LD Anode, PD Cathode PD Anode Bottom View Absolute Maximum Ratings (TC=25°C) Item CW Output Power LD Reverse Voltage PD Reverse Voltage Operating Case Temperature Storage Temperature Symbol PO VR(LD) VR(PD) TC Tstg Value 550 1.5 10 -20 … +35 -40 … +70 Unit mW V V °C °C Sp.

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Datasheet Details

Part number RLT1050M-500G
Manufacturer Roithner
File Size 188.49 KB
Description High Power Infrared Laser Diode
Datasheet download datasheet RLT1050M-500G Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RLT1050M-500G TECHNICAL DATA High Power Infrared Laser Diode Features • • • • Lasing Mode Structure: multi mode Peak Wavelength : typ. 1050 nm Optical Ouput Power: 500 mW Package: 9 mm Electrical Connection Pin Configuration n-type PIN 1 2 3 Function LD Cathode LD Anode, PD Cathode PD Anode Bottom View Absolute Maximum Ratings (TC=25°C) Item CW Output Power LD Reverse Voltage PD Reverse Voltage Operating Case Temperature Storage Temperature Symbol PO VR(LD) VR(PD) TC Tstg Value 550 1.