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RLT635-100G
TECHNICAL DATA
High Power Visible Laser Diode
Emitting Aperatur: 1x100 µm² Lasing wavelength: 635 nm, typ. Max. optical power: 100 mW Package: 9 mm PIN CONNECTION:
1) Laserdiode cathode 2) Laserdiode anode 3) n.c.
Absolute Maximum Ratings (Tc = 25°C) CHARACTERISTIC SYMBOL Optical Output Power Po LD Reverse Voltage VR(LD) PD Reverse Voltage VR(PD) Operating Temperature Top Storage Temperature Tstg
RATING 100 0 .. +25 -10 ..
RLT635-100G Datasheet
