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RLT6530G - Laser Diode

Datasheet Summary

Description

Optical Power (mW) Operation Temperature (ºC) Storage Temperature (ºC) LD Reverse Voltage (V) PD Reverse Voltage (V) SYMBOL Po Top Tstg VLDR VPDR RATED VALUE 30 -10 to +40 -40 to +85 2 30 Index Guided MQW Structure Wavelength : 655 nm (Typ.) Optical Power : 30 mW CW Threshold Current : 50 mA ( Ty

Features

  • Visible Laser Diode.

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Datasheet Details

Part number RLT6530G
Manufacturer Roithner
File Size 95.39 KB
Description Laser Diode
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Full PDF Text Transcription

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RLT6530G Features • • • • • Visible Laser Diode ABSOLUTE MAXIMUM RATINGS ( Tc=25ºC ) DESCRIPTION Optical Power (mW) Operation Temperature (ºC) Storage Temperature (ºC) LD Reverse Voltage (V) PD Reverse Voltage (V) SYMBOL Po Top Tstg VLDR VPDR RATED VALUE 30 -10 to +40 -40 to +85 2 30 Index Guided MQW Structure Wavelength : 655 nm (Typ.) Optical Power : 30 mW CW Threshold Current : 50 mA ( Typ. ) Standard Package : 9.0 mm Ø OPTICAL AND ELECTRICAL CHARACTERISTICS ( Tc=25ºC ) DESCRIPTION Lasing Wavelength (nm) Threshold Current (mA) Operation Current (mA) Operation Voltage (V) Monitor Current (µA) Slope Efficiency (mW/mA) Beam Divergence ¦ (º) Beam Divergence ⊥ (º) Astigmatism (µm) SYMBOL λp Ith Iop Vop Im ç θ¦ θ⊥ As MIN. 645 30 60 2.0 10 0.3 8 25 *** TYPICAL 655 50 80 2.2 0.
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