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RLT6530G - Laser Diode

General Description

Optical Power (mW) Operation Temperature (ºC) Storage Temperature (ºC) LD Reverse Voltage (V) PD Reverse Voltage (V) SYMBOL Po Top Tstg VLDR VPDR RATED VALUE 30 -10 to +40 -40 to +85 2 30 Index Guided MQW Structure Wavelength : 655 nm (Typ.) Optical Power : 30 mW CW Threshold Current : 50 mA ( Ty

Key Features

  • Visible Laser Diode.

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Datasheet Details

Part number RLT6530G
Manufacturer Roithner
File Size 95.39 KB
Description Laser Diode
Datasheet download datasheet RLT6530G Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RLT6530G Features • • • • • Visible Laser Diode ABSOLUTE MAXIMUM RATINGS ( Tc=25ºC ) DESCRIPTION Optical Power (mW) Operation Temperature (ºC) Storage Temperature (ºC) LD Reverse Voltage (V) PD Reverse Voltage (V) SYMBOL Po Top Tstg VLDR VPDR RATED VALUE 30 -10 to +40 -40 to +85 2 30 Index Guided MQW Structure Wavelength : 655 nm (Typ.) Optical Power : 30 mW CW Threshold Current : 50 mA ( Typ. ) Standard Package : 9.0 mm Ø OPTICAL AND ELECTRICAL CHARACTERISTICS ( Tc=25ºC ) DESCRIPTION Lasing Wavelength (nm) Threshold Current (mA) Operation Current (mA) Operation Voltage (V) Monitor Current (µA) Slope Efficiency (mW/mA) Beam Divergence ¦ (º) Beam Divergence ⊥ (º) Astigmatism (µm) SYMBOL λp Ith Iop Vop Im ç θ¦ θ⊥ As MIN. 645 30 60 2.0 10 0.3 8 25 *** TYPICAL 655 50 80 2.2 0.