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RLT760-10G Datasheet PDF

Roithner RLT760-10G

RLT760-10G is a Laser Diode emitting at typical 760 nm with rated output power of 10 mW CW at room temperature. The 9 mm TO package includes a cap and flat window, and contains a built in monitor PD.
Part No. RLT760-10G
Datasheet RLT760-10G Download
Manufacturer
Roithner
Description Laser Diode
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RLT760-10G datasheet page 1 preview

DESCRIPTION

MAXIMUM RATINGS

Parameter Optical Output Power Operating Temperature Storage Temperature Soldering Temperature Symbol PO TCASE TSTG TSOLD Min. -20 -40 Values Max. 10 +60 +85 180 Unit mW °C °C °C Specifications Parameter Central Wavelength Optical Output Power Emitting Area Threshold Current Forward Current Forward Voltage Beam Divergence Beam Divergence Spectral Width (FWHM) Static Alignment Positional Accuracy Mode Structure Slope Efficiency Monitor Current Symbol λC PO WxH ITH IOP UOP ӨII Ө┴ Δλ Δa II x ΔX, ΔY, ΔZ η IM Min. 755 - 30 150 1.5 8 25 1.0 - 0.07 Values Typ. 760 10 3 x 1.5 40 200 2.0 10 30 2.0 SM 0.5 0.4 Max. 765 - 50 250 2.2 12 35 5.0 < ±3 ±100 0.8 Unit nm mW µm mA mA V deg. deg. nm deg. µm mW/mA mA 1 Electrical Connection Lead PIN 1 PIN 2 PIN 3

DESCRIPTION

PD Cathode PD Anode, LD Cathode LD Anode Drawing Bottom View All dimensions in mm Mounting Instruction In order to maintain lifetime and stability of the laser diode it is essential to provide efficient heat management.
RLT760-10G page 2 preview