RLT8320MG Datasheet | Roithner

ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: office@roithner-laser. http://.roithner-laser. TECHNICAL DATA High Power Infrared Laserdiode Structure: AlGaAs double heterostructure Lasing wavelength: 830 nm typ. Max. optical power: 20 mW Package: 5.6 mm PIN CONNECTION: 1) Laserdiode cathode 2) Laserdiode anode and photodiode cathode 3) Photodiode anode LASERDIODE MUST BE COOLED! NOTE! Maximum Ratings (Tc=25°C) CHARACTERISTIC SYMBOL Optical Output Power Po LD Reverse Voltage VR(LD) PD Reverse Voltage VR(PD) Operating Temperature Top Storage Temperature Tstg RATING 20 2 30 -10 .. +50 -40 .. +85 UNIT mW V V...