RLT83500GOP Datasheet PDF

RLT83500GOP TECHNICAL DATA High Power Infrared Laser Diode Lasing wavelength: 830 nm typ. Max. optical power: 500 mW, cw Emitting Aperture: 1x50 μm² Package: 9 mm PIN CONNECTION: 1) Laserdiode cathode 2) Laserdiode anode 3) n.c. Specification (Tc = 25°C) CHARACTERISTIC Optical Output Power Threshold Current Operation Current Operation Voltage Slope Efficiency Series Resistance Central Wavelength Spectral Width Wavelength Temperature Coefficient Beam Divergence Beam Divergence Polarization Reverse Voltage Operating Temperature Storage Temperature MIN 0.5 ≤0.25 ≤0.95 ≤2.1 ≥0.80 0.80 830 ±10 ≤3 0.3 10 40 TE 2.0 10 - 30 -10 – 70 03.08.2010 rlt83500gop.doc UNIT W A A V W/A Ω nm nm nm/°C deg deg V °C °C 1 of 2 PACKAGE DIMENSIONS: Operating notes: 1. Be sure that the operating current is not exceed the specified operating current, or else which will accelerate aging, shorten lifetime or even damage devices. 2. Increase the current gradually to the specified operating value. For shutting down the laser diode, please decrease the current to zero gradually, and then turn off the power.