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RLT850M-1WG50 - Laser Diode

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Part number RLT850M-1WG50
Manufacturer Roithner
File Size 217.81 KB
Description Laser Diode
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RLT850M-1WG50 TECHNICAL DATA Infrared Laser Diode Specifications • • • • • Structure: Peak Wavelength: Optical Output Power: Package: Monitor PD: AlGaAs/InGaAs AlGaAs/InGaAs 852 nm 1 W, cw 9 mm, flat window build-in n-type Electrical Connection Pin Configuration n-type PIN 1 2 3 Function LD Cathode LD Anode, PD Cathode (case) PD Anode Bottom View Electro-Optical Characteristics Item Optical Specifications Central Wavelength Spectral Width (FWHM) Optical Output Power Beam Divergence Emitting Aperture Mode Structure Electrical Specifications Forward Current Threshold Current Forward Voltage Slope Efficiency Monitor Current Absolute Maximum Ratings Lifetime Operating Case Temperature Storage Temperature Soldering Temperature * * must be completed within 3 seconds specified at 25°C Symbo
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