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RLT904-30MG - Laser Diode

General Description

SYMBOL Po Top Tstg VLDR VPDR RATED VALUE 30 -10 to +50 -40 to +85 2 30

Key Features

  • Optical Power (mW) Operation Temperature (oC) Storage Temperature (oC) LD Reverse Voltage (V) PD Reverse Voltage (V) Index Guided MQW Structure Wavelength : 904 nm (Typ. ) Optical Power : 30 mW CW Threshold Current : 50 mA ( Typ. ) Package Style : TO-18 (5.6 mmØ).

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Datasheet Details

Part number RLT904-30MG
Manufacturer Roithner
File Size 167.91 KB
Description Laser Diode
Datasheet download datasheet RLT904-30MG Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RLT904-30MG Laser Diode Technical Data ABSOLUTE MAXIMUM RATINGS ( Tc=25 oC ) DESCRIPTION SYMBOL Po Top Tstg VLDR VPDR RATED VALUE 30 -10 to +50 -40 to +85 2 30 Features • • • • • Optical Power (mW) Operation Temperature (oC) Storage Temperature (oC) LD Reverse Voltage (V) PD Reverse Voltage (V) Index Guided MQW Structure Wavelength : 904 nm (Typ.) Optical Power : 30 mW CW Threshold Current : 50 mA ( Typ. ) Package Style : TO-18 (5.6 mmØ) OPTICAL AND ELECTRICAL CHARACTERISTICS ( Tc=25 oC ) DESCRIPTION Lasing Wavelength (nm) Threshold Current (mA) Operating Current (mA) Operating Voltage (V) Monitor Current (mA) SYMBOL λp Ith Iop Vop Im η θ⎪⎢ θ⊥ As MIN. 890 30 50 1.8 0.2 0.5 8 25 * TYPICAL 904 50 80 2.0 0.5 0.7 10 30 11 MAX. 920 70 100 2.5 1.5 0.