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S6505MG - Infrared Laser Diode

Features

  • Lasing Mode Structure: single mode.
  • Peak Wavelength : typ. 650 nm.
  • Optical Ouput Power: 5 mW.
  • Package: 5.6 mm Electrical Connection Pin Configuration n-type PIN Function 1 LD Cathode 2 LD Anode, PD Cathode 3 PD Anode Bottom View Absolute Maximum Ratings (TC=20°C) Item CW Output Power LD Reverse Voltage PD Reverse Voltage Operating Case Temperature Storage Temperature Symbol PO Vr VrPD TC Tstg Value 5 2 30 -10 … +50 -15 … +85 Unit mW V V °C °C Specifica.

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Datasheet Details

Part number S6505MG
Manufacturer Roithner
File Size 340.86 KB
Description Infrared Laser Diode
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S6505MG TECHNICAL DATA Infrared Laser Diode Features • Lasing Mode Structure: single mode • Peak Wavelength : typ. 650 nm • Optical Ouput Power: 5 mW • Package: 5.6 mm Electrical Connection Pin Configuration n-type PIN Function 1 LD Cathode 2 LD Anode, PD Cathode 3 PD Anode Bottom View Absolute Maximum Ratings (TC=20°C) Item CW Output Power LD Reverse Voltage PD Reverse Voltage Operating Case Temperature Storage Temperature Symbol PO Vr VrPD TC Tstg Value 5 2 30 -10 … +50 -15 … +85 Unit mW V V °C °C Specifications (TC=20°C) Item Optical Specifications CW Output Power Center Wavelength FWHM Beam Divergence Electrical Specifications Threshold Current Operating Current Slope Efficiency Operating Voltage Monitor Current Symbol PO λC θ║ θ┴ Ith Iop η Uop Im Min. 640 5 28 0.4 0.05 Typ.
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